用于低中频GPS接收机的高性能CMOS差分低噪声放大器设计

caroline11

Abstract：A 1．575 GHz CM oSfcomplementary metal—oxide—semiconductortransistor)low noiseamplifier(LNA)suitableforalow intermediatefrequency(IF)globalpositioningsystem(GPS)receiverispresented．Considering parasiticeffectsresulting frombond pad an d input electrostatic discharge(ESD 1protectiondiodes，the optimi zation of the input matching and noiseperformance is an alyzed．and a narrowband inductor mode1 isapplied to the circuit design an d optimization．Based on theVolterraseries，the nonlinearity ofthe LNA isan alyzed an d anequation describing input—referred third—order intercept points(，IP3) which indicate the nonlinearity effects is derived；accordingly， the trade．offbetween the powerconsumption an dlinearity ismade．TheLNA isdesignedand simulated withTSM C(Taiwan Semi conductor Man ufacturing Compan y) 0．18 umradio freq uency(RF1technology．Simulationresultsshow thattheLN_A hasanoisefigureofonly 1．1dB，一8．3dBm ，l with3mA currentconsumption from a 1．8 V voltage supply． and theinputimpedan cesmatch wel1．